

FET Capacitance Effects
Field Effect Transistor circuits where this equivalent circuit is useful are assumed to be operating at frequencies
where the reactance of the device capacitance is such that they do not significantly affect the circuit response.
Such as, the equivalent has limited usefulness.
The FET demonstrates capacitive effects. These are labeled as C_{DS} C_{GS} C_{GD} and are
depicted on the equivalent circuit as follows:
Measurements of these capacitances are often difficult. Manufactures may specify the capacitances as
C_{iss} C_{rss} and C_{oss}.
C_{GD`} = C_{GD}(1 + g_{m} Z_{L})
C_{GD`} = C_{GD}(1  A_{VGD})
The Miler Effect also modifies the apparent capacitance from gate to source in the source follower and drain loaded
amplifier with unbypassed resistance in the source lead.
C_{in} = (G_{CS}(1  A_{VGS})) + (C_{GD}(1  A_{VGD}))
A_{VGS} is the voltage gain gatetosource. This is zero (A_{VGS} = 0) if the source is AC ground.
A_{VGD} is the voltage gain, gatetodrain (g_{m} Z_{L} in the drain loaded amplifier). At
high frequencies the effects of C_{in} and C_{o} are apparent. In a circuit test situation the scope
probe capacitance, or other measuring instrument will appear in parallel and add to C_{in} or C_{o}.
The input gate circuit RC will establish one high frequency breakpoint. The output circuit RC will produce another.
The input circuit RC is the capacitance C_{in} and the R seen by the capacitance.
R_{eq} = R_{X} / R_{G}
C = C_{in}
On the output side, the R seen by the capacitance, C_{o} is R_{L} in parallel with r_{d}.
The frequency break points established by each are calculated by the common relationship:
f = 1 / 2piRC
The accumulative high frequency effects can be determined by converting the input and output RC times to risetime,
then finding the overall circuit risetime and converting this result to frequency response.
t_{r1,2} = 2.2RC
t_{r} = 1.1 sqrt(t_{r1}^{2}+t_{r2}^{2})
f_{2} = 0.35 / t_{r}
Or by combining the interactive effects of the input pole and output pole when doing the Bode Plot of each.
Engineering key words: capacitor, field effect transistor, FET, equivalent device, measurement, specification sheets,
spec sheet, manufacture, drain, gate, source, DGS, amplifier, amp, resistance, impedance, inductance, miller effect,
load, voltage, current, susceptance, leads, break point, frequency, over driven.
